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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1914
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1914 is a switching device which can be driven directly by a 4 V power source. The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
0 to 0.1
1 2 3
FEATURES
* Can be driven by a 4 V power source * Low on-state resistance RDS(on)1 = 57 m MAX. (VGS = -10 V, ID = -2.5 A) RDS(on)2 = 86 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)3 = 96 m MAX. (VGS = -4.0 V, ID = -2.5A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1914TE
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-30 20 4.5 18 0.2 2 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode Marking: TF
Body Diode
Source
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR-4 Board, t 5 sec. Remark
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13810EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan
(c)
1998, 1999
PA1914
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -2.5 A VGS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A VGS = -4.0 V, ID = -2.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDS = -25 V VGS = 0 V f = 1 MHz VDD = -15 V ID = -2.5 A VGS(on) = -10 V RG = 10 VDD= -24 V ID = -4.5 A VGS = -10 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 100 A/s -1.0 1 -1.6 7.1 43 58 64 589 210 86 546 148 65 16 57 63 80 11 1.5 2.8 0.88 22 11 57 86 96 MIN. TYP. MAX. -10 10 -2.5 UNIT
A A
V S m m m pF pF pF pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D13810EJ1V0DS00
PA1914
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
d ite ) im 10 V -
ID (pulse)
PW
PW
ID - Drain Current - A
dT - Derating Factor - %
-10
)L on = S( RD GS
PW
=1 0
=1
ms
V (@
ID (DC)
PW
ms
60
-1
=1 00 ms =5 s
40
20
-0.1
0
30 60 90 120 TA - Ambient Temperature - C
150
-0.01 -0.1
Single Pulse 2 Mounted on 250mm x 35m Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board
-1
-10
-100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -20 -16 -12 -8 -4 VGS = -20 V VGS = -10 V VGS = -4.5 V
ID - Drain Current - A
TRANSFER CHARACTERISTICS -100 -10 -1 -0.1 -0.01 -0.001
TA = 125C TA = 75C TA = 25C TA = -25C
VDS = -10 V
ID - Drain Current - A
VGS = -4.0 V
-0.0001 -0.00001 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0 0.0
-0.2
-0.4
-0.6
-0.8
-1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = - 1 mA
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100 VDS = -10V TA = -25 C TA = 25 C TA = 75 C 1 TA = 125 C
VGS(off) - Gate to Source Cut-off Voltage - V
-2.0
10
-1.5
0.1
-1.0 -50
0
50
100
150
0.01 -0.01
-0.1
-1
ID - Drain Current - A
-10
-100
Tch - Channel Temperature - C
Data Sheet D13810EJ1V0DS00
3
PA1914
RDS(on) - Drain to Source On-State Resistance - m
120
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = -4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 VGS = -4.5 V
100
80
TA = 125C TA = 75C
TA = 125C
80
TA = 75C TA = 25C
60
TA = 25C TA = -25C
60
TA = -25C
40 -0.01
-0.1
-1
-10
-100
40 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 VGS = -10 V
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - m
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 ID = -2.5 A VGS = -4.0 V 80 VGS = -4.5 V 60 VGS = -10 V 40
60
TA = 125C
50
TA = 75C
TA = 25C
40
TA = -25C
30 -0.01
-0.1
-1
-10
-100
20 -50
ID - Drain Current - A
0 50 100 Tch - Channel Temperature -C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
150
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = -2.5 A
80
Ciss, Coss, Crss - Capacitance - pF
100
10000
f = 1 MHz VGS = 0V
1000 Ciss Coss Crss
60
100
40
20 0
10 -0.1
-1
-10
-100
-8 -16 -12 -4 VGS - Gate to Source Voltage - V
-20
VDS - Drain to Source Voltage - V
4
Data Sheet D13810EJ1V0DS00
PA1914
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Swwitchig Time - ns
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
100
tr tf td(off) td(on)
IF - Source to Drain Current - A
-10
10
1
10 VDD = -15V VGS(on) = -10V RG = 10 -1 ID - Drain Current - A
0.1
1 -0.1
0.01 0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS 12
VGS - Gate to Source Voltage - V
ID = -4.5 A 10 8 6 4 2 0 0 VDD = -24 V -15 V -6 V
2
4
6
8
10
12
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Without Board
100
Mounted on 250mm2 x 35 m Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board Single Pulse
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - S
10
100
1000
Data Sheet D13810EJ1V0DS00
5
PA1914
[MEMO]
6
Data Sheet D13810EJ1V0DS00
PA1914
[MEMO]
Data Sheet D13810EJ1V0DS00
7
PA1914
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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